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Electrical Characteristics
T C = 25°C unless otherwise noted
Symbol
Parameter
Test Condition
MIN
TYP
MAX
Units
Off Characteristics (Note1)
BV DSS
I DSS
I GSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
V GS = 0V, I D =10uA
V DS = 60V, V GS = 0V
V DS = 60V, V GS = 0V, @T C = 125 ° C
V GS = ±20V, V DS = 0V
60
-
-
78
0.001
7
0.2
-
1.0
500
±10
V
uA
nA
On Characteristics (Note1)
V GS(th)
Gate Threshold Voltage
V DS = V GS , I D = 250uA
1.0
1.76
2.0
V
R DS(ON)
Satic Drain-Source On-Resistance V GS = 5V, I D = 0.05A,
V GS = 10V, I D = 0.5A, @T j = 125°C
-
-
1.6
2.53
7.5
13.5
?
I D(ON)
g FS
On-State Drain Current
Forward Transconductance
V GS = 10V, V DS = 7.5V
V DS = 10V, I D = 0.2A
0.5
80
1.43
356.5
-
-
A
mS
Dynamic Characteristics
C iss
Input Capacitance
-
37.8
50
pF
C oss
C rss
Output Capacitance
Reverse Transfer Capacitance
V DS = 25V, V GS = 0V, f = 1.0MHz
-
-
12.4
6.5
25
7.0
pF
pF
Switching Characteristics
t D(ON)
t D(OFF)
Turn-On Delay Time
Turn-Off Delay Time
V DD = 30V, I D = 0.2A, V GEN = 10V
R L = 150 ? , R GEN = 25 ?
-
-
5.85
12.5
20
20
ns
Note1 : Short duration test pulse used to minimize self-heating effect .
? 2007 Fairchild Semiconductor Corporation
2N7002T Rev. A
2
www.fairchildsemi.com
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